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翻译EPI: 24
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帖子: 574
在线: 78.5小时
虫号: 5494315
注册: 2017-01-17
专业: 高分子合成化学

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Currently, graphene synthesis involves several key factors need to be improved: (i) lengthy high-temperature annealing processes to increase the grain size of the metal catalyst used to form graphene; (ii) utilization of purified and compressed gases to offer a homogenous and controlled delivery of carbon source materials; and (iii) the use of lengthy vacuum operation to avoid the presence of any detrimental reactive oxygen species from air2,4. To overcome these problems, we have designed a thermal CVD process to produce graphene in an ambient-air environment that is completely free of compressed or purified gases and requires minimum processing time.

目前，石墨烯合成涉及多个需要改进的关键因素：（i）冗长的高温退火过程增加用来形成石墨烯的金属催化剂的晶粒尺寸；（ii）利用纯化和压缩气体来提供碳源材料的均匀和受控的递送；以及（iii）使用冗长的真空操作来避免存在来自空气的任何有害反应性氧物质。为了克服这些不足，我们设计了热CVD工艺来在完全不含压缩或纯化气体且需要极少加工时间的周围空气环境中制备石墨烯。

The process is schematically illustrated in Fig. 1a, in which the precursor for graphene growth and a metal catalyst (for example, Ni foil) are placed close together inside the heating zone of a furnace, before heating the quartz tube. The quartz tube is then sealed and the temperature is increased. During the ramping stage, air inside the quartz tube is released through a valve to maintain atmospheric pressure. Once the annealing stage is complete, the sample is removed from the heating zone for rapid cooling. Raman spectra of the samples grown at 800 °C in the ambient-air process indicated the presence of single-to-few layer graphene films covering the surface of the growth substrate (Fig. 1b).

这种热CVD工艺如图1a示意性显示，其中将用于石墨烯生长的前体和金属催化剂（例如，Ni箔）一起靠近设置在炉子的热区里面，然后加热石英管。然后，密封石英管，增加温度。在升温阶段，通过阀门来释放石英管里面的空气，以保持常压。一旦退火阶段完成，从热区取出样品用于快速冷却。在周围空气工艺中在800℃下生长的样品的拉曼光谱表明存在覆盖生长衬底的单层石墨烯膜-到-几层石墨烯膜（图1b）。

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