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Single crystals of deuterated κ-(BEDT-TTF)2Cu[N(CN)2]-Br, hereafter denoted as d8-κ-Br, were synthesized using a standard galvanostatic electrocrystallization method with deuterated BEDT-TTF. A voltage pulse with a specified pulse height and pulse width was applied across the circuit consisting of the sample with an electrode separation of 0.4?0.5 mm and a load resistance of 1 kΩ connected in series. A laser pulse at a wavelength of 470 nm, synchronized with the pulsed voltage,was irradiated on the area between the two electrodes on the surface of the crystal at a repetition rate of 2 Hz. The laser light intensity used for irradiation was 6.6 μJ/pulse, unless otherwise noted 发自小木虫Android客户端 |
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