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Different processes were introduced in a multi-level interconnect stack using ULK/USG stack as IMD, showing excellent electrical properties, and three times electromigration time-to-failure improvement with respect to standard SiCN barrier. However, it was shown that existing process conditions lead to some introduction of N atoms into ULK dielectric, showing there isstill some room for process optimization in architectures using un-capped ULKs, to keep the benefits of EM improvement and aggressive effective dielectric constant. 有没有哪位兄弟帮我看看一下上文的ULK、USG 、IMD三个简称是什么啊？ 多谢了。 是关于集成电路阻挡层的文献 |
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