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dirkjiayou

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[求助] 谁能给溅射靶材下一个既全面、又准确的定义，如果被采纳，直接奉上50个金币！已有1人参与

各位虫友，小弟是做靶材的，之前也用过靶材，今天在实验室有人问我靶材究竟是什么东西，我就根据我所知道的大概说了一下，似乎也没怎么说明白。现在静下心来想想，我还真是说不清楚。如果谁能给靶材下一个既全面，又准确的定义，如果被采纳，直接奉上50铬金币！注：最好是能让外行人一听就懂的，呵呵！

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1楼 2016-05-05 16:43:34

已阅回复此楼关注TA 给TA发消息送TA红花 TA的回帖

zbhwel

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dirkjiayou: 金币+5, ★有帮助 2016-05-25 15:53:32

可以参考维基百科对溅射和溅射沉积的定义和描述。

Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles,[1] particularly, in the laboratory, gas ions. It only happens when the kinetic energy of the incoming particles is much higher than conventional thermal energies (≫ 1 eV). This process can lead, during prolonged ion or plasma bombardment of a material, to significant erosion of materials, and can thus be harmful. On the other hand, it is commonly utilized for thin-film deposition, etching and analytical techniques.

Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film.

Termwiki有溅射靶的描述：
sputtering target

Source material during sputter deposition processes;typically a disc inside the vacuum chamber which is exposed to bombarding ions,knocking source atoms loose and onto samples.