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【奖励】本帖被评价105次，作者罗马里奥增加金币 82.4 个

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罗马里奥

至尊木虫 (正式写手)

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[资源] nature最新报道：4英寸圆片规模生产单层硫化钼和硫化钨

美国康奈尔大学的Jiwoong Park教授在最新一期nature上发表了一篇名为“High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity”的研究文章。据报道，该研究团队通过使用了一种新的金属-有机杂化的气相沉积法，可以制备出在4英寸二氧化硅圆片上分布均一的单层硫化钼和硫化钨，产率高达99%。他们同时指出这些纳米片具有较好的电子性质，尤其对于硫化钼来说，常温电子移动能力达到30 cm2 V−1 s−1。

看来二维单层材料在未来一段时间，还将是各大期刊的热门话题。

我在小木虫上对于二维材料文章的其它分享

1、Bismuth Oxyhalide Nanomaterials: Layered Structures Meet Photocatalysis
http://muchong.com/bbs/viewthread.php?tid=7875210

2、华中师大张礼知教授最新BiOCl力作：基于晶面角度来探讨掺杂过程
http://muchong.com/bbs/viewthread.php?tid=8573914

3、通过调控层状结构诱导的内电场强度来增强卤氧化铋的光催化活性（Bi3O4Cl）
http://muchong.com/bbs/viewthread.php?tid=7080799

4、Chem Soc Rev上二维层状材料综述专刊
http://muchong.com/bbs/viewthread.php?tid=8859403

5、1T金属相MoS2基超级电容器——Nature Nanotechnology出品
http://muchong.com/bbs/viewthread.php?tid=8734698

6、倾情奉献二维层状材料综述文章20篇——Acc Chem Res出品
http://muchong.com/bbs/viewthread.php?tid=8455530

7、北大刘忠范教授最新大作——气相沉积合成单层过渡金属硫化物
http://muchong.com/bbs/viewthread.php?tid=7955996

8、Science重大综述：石墨烯和相关的二维晶体及其组装体在能量转化和储存方面的研究进展
http://muchong.com/bbs/viewthread.php?tid=8368624

The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology1, 2, 3. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers4, provide ideal semiconducting materials with high electrical carrier mobility5, 6, 7, 8, 9, 10, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect11, bandgap modulation12, indirect-to-direct bandgap transition13, piezoelectricity14 and valleytronics15. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal–organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm2 V−1 s−1 at room temperature and 114 cm2 V−1 s−1 at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.

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[ Last edited by 罗马里奥 on 2015-4-30 at 15:33 ]

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附件 1 : TMD-2015-nature14417-High-mobility_three-atom-thick_semiconducting_films_with_wafer-scale_homogeneity.pdf

2015-04-30 11:15:14, 4.75 M

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