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ACS Nano11.13 新鲜在线：CVD of High Quality Graphene Films from CO2 Atmospheres
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Chemical Vapor Deposition of High Quality Graphene Films from Carbon Dioxide Atmospheres Andrew James Strudwick1†, Nils Eike Weber1, Matthias Georg Schwab 1, Michel Kettner2,3, R. Thomas Weitz 2,3, Josef R. Wünsch1, Klaus Müllen1,4*, Hermann Sachdev1,4* Abstract The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm-1 at 514.5 nm excitation. In addition, high charge carrier mobility’s of up to 1975 cm2/Vs were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of preexisting and emerging carbon impurities and a continuous suppression and in-situ etching of carbon of lesser quality being co- deposited during the CVD growth.  000.jpg |
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2014-11-16 21:48:43, 1.45 M
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