| 查看: 811 | 回复: 1 | |||
| 本帖产生 1 个 翻译EPI ，点击这里进行查看 | |||
hongyangb铜虫 (初入文坛)
|
[求助]
求英译一段中文摘要，急用！如果觉得内容有哪里不太通顺请告知。非常感谢
|
||
| 摘要：铁酸铋是目前发现的唯一能在室温下表现出多铁性的材料，具有禁带宽度较小、剩余极化强度较大、居里温度较高的优良特性，在光电器件、自旋电子器件、铁电随机存储器、磁电存储单元等领域有着广阔的应用前景。但由于铁酸铋薄膜存在漏电流较大、磁电耦合性较弱等问题，制约了它的实际应用。国内外学者多采用优化铁酸铋薄膜的制备工艺、离子掺杂等方法来改善其结构与性能。其中，离子掺杂具有操作方便、易于实现薄膜的微结构及性能调控等优点，因而受到广泛关注。本文综述了国内外近年关于铁酸铋薄膜电性能掺杂改性的相关工作，详细阐述了不同种类的掺杂，包括A位（三价镧系元素与二价碱金属元素）、B位（过渡金属元素等）以及AB位共掺杂。并根据掺杂对铁酸铋薄膜的漏电流及剩余极化强度的影响，对A位掺杂和B位掺杂中的元素进行了分类，系统的总结了各类元素掺杂改性的效果及其机理。最后，提出了铁酸铋薄膜亟待解决的问题。 |
回复此楼» 猜你喜欢
二审4个多月了还是Awaiting Reviewer Scores
已经有4人回复
-
OpenAI又攻克数学难题了，离AI做有机合成还有多远？
已经有13人回复
-
申请科研项目纯靠实力能成功吗？
已经有7人回复
-
极限拉扯，如何抉择
已经有14人回复
-
课题组会帮你通过考核么？
已经有7人回复
-
入职后第一次管课题组的专利缴费，对账才发现官费比别人多掏了一倍
已经有6人回复
-
售一区SCI文章T0P，我:8O.551.O54,科目全,可十急
已经有9人回复
-
售SCI一区文章，我:8O5.5.1.O5.4,科目全,可伽急
已经有10人回复
-
售SCI一区T0P文章，我:8.O55.1.O.54,科目全,可十急
已经有8人回复
-
售SCI一区T0P文章，我:8.O55.1.O.54,科目全,可十急
已经有9人回复
ssssllllnnnn 
至尊木虫 (知名作家)
Translator and Proofreader
- 翻译EPI: 1690
- 应助: 452 (硕士)
- 金币: 31580.9
- 红花: 100
- 帖子: 7681
- 在线: 19966.6小时
- 虫号: 3328089
- 注册: 2014-07-17
- 专业: 肿瘤发生
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
RXMCDM: 金币+1, 多谢应助！ 2014-09-14 10:56:21
hongyangb: 金币+20, 翻译EPI+1, ★★★很有帮助, 非常感谢 2014-09-14 12:43:12
RXMCDM: 金币+1, 多谢应助！ 2014-09-14 10:56:21
hongyangb: 金币+20, 翻译EPI+1, ★★★很有帮助, 非常感谢 2014-09-14 12:43:12
| Abstract: Bismuth ferrite is the only material found so far with the multiferroic properties at room temperature. It has several excellent features, including a smaller band gap, large remnant polarization and high Curie temperature. Therefore, bismuth ferrite has broad application prospects in optoelectronic devices, self-spinning electronic devices, ferroelectric random access memories, magnetic storage units, and other areas. However, its practical application has been limited largely because of the presence of a large leakage current and weak magnetic coupling issues of bismuth ferrite films. Most of the domestic and international scholars use the optimized preparation process of bismuth ferrite thin films, ion doping and other methods to improve its structure and performance. Among them, the ion doping is easy to operate, easy to implement micro-structure, and easy to control its performance, and therefore attracted widespread attention. This paper reviews the domestic and international publications in recent years related to electrical properties of doped bismuth ferrite thin films. It is described in great details in different types of doping, including the A-site (trivalent lanthanide and divalent alkali metal elements), B site (transition metals, etc.) and A-B sites co-doped. The elements in A-site and B-site doping are clarified based on the effects of doping on the leakage current of bismuth ferrite films and residual polarization intensity. The effects and mechanisms of various types of elements doping are summarized systemically. Finally, the problems are presented related to the bismuth ferrite films need to be resolved urgently. |
2楼2014-09-14 10:37:07
10
