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Adv. Mater.最新综述：光敏石墨烯晶体管
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Photosensitive Graphene Transistors Jinhua Li , Liyong Niu, Zijian Zheng, and Feng Yan* J. H. Li, Prof. F. Yan Department of Applied Physics The Hong Kong Polytechnic University Hong Kong, China E-mail: apafyan@polyu.edu.hk L. Y. Niu, Prof. Z. J. Zheng Nanotechnology Center Institute of Textiles and Clothing The Hong Kong Polytechnic University Hong Kong, China High performance photodetectors play important roles in the development of innovative technologies in many fi elds, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientifi c research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene fi eld effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplifi cation function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including tera- hertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demon- strating more clearly their advantages and shortcomings in practical applica- tions. It is expected that highly sensitive photodetectors based on graphene transistors will fi nd important applications in many emerging areas especially fl exible, wearable, printable or transparent electronics and high frequency communications.   |
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2014-04-09 18:35
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2014-04-11 23:44
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