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Nature Nano综述：Silicon nanostructures for photonics and photovoltaics
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最新一期Nature Nanotechnology出了纳米硅有关光电，光伏的综述：Silicon nanostructures for photonics and photovoltaics。硅一直是电子器件工业的主要材料，但是the limited degrees of freedom in material design combined with the indirect bandgap是限制硅在光电光伏应用的主要瓶颈。借助纳米科学，纳米硅可以突破这一瓶颈，并且一些合成方法合成的纳米硅性能已经超过一些材料。we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material. 全文14页，引文174篇。 Silicon, as a monoatomic crystal, offers only very limited degrees of freedom for manipulating its optoelectronic properties. It is therefore impressive how many methods, mainly based on nanoscale engineering, have been developed to extend its capabilities. These methods either manipulate silicon’s intrinsic electronic properties using quantum size and surface effects or they add photonic functionality through wavelength-scale nanostructures such as photonic crystals. We have provided an overview of the most promising of these methods and have outlined the outstanding challenges. Silicon nanocrystals, without doubt, have been one of the most important developments in the field, as they offer strong carrier confinement and modification of the energy levels through quantization, as well as the ability to use their surface as a further design parameter. This has now led to the truly remarkable observation of photoluminescence levels from these nanocrystals that are comparable to those of direct-bandgap quantum dots. Electroluminescence remains a challenge, however, because the dielectric matrix (typically SiO 2 ) makes it difficult to inject and extract carriers. Silicon nanowires offer an interesting alternative, as they combine strong confinement with a readily available conduction path. Such nanowires are still in their early stages of development, however, with the main challenge being the development of a reliable and impurity-free growth method. Once this has been achieved, we can look forward to silicon nanostructures combining quantum-dot-like optical properties and with electrical conduction that may ultimately rival III–V materials.  1.jpg  Q1.jpg  1201.jpg |
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2014-01-09 15:17:05, 2.58 M
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