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1¡£·ÒëÕâ¾ä»°°¡£º Ïë°ì·¨Ìá¸ßµç×èÂʱ仯¦¤¦ÑºÍ½µµÍ±¡Ä¤µÄ±¾µ×µç×èÂʦÑÊÇÌá¸ßMR²ÄÁÏÐÔÄܵÄÓÐЧ°ì·¨¡£½ü¼¸ÄêÀ´£¬Í¨¹ý¸ÄÉÆ½çÃæ´¦µç×ÓÉ¢ÉäÇé¿öµÄÑо¿ÒýÆðÁËÈËÃǵļ«´óÐËȤ[23-28]¡£ 2¡£ÈóÉ«ÈóɫӢÓ Abnormal AMR refers to the AMR effect found in perovskite-type manganese oxides, which is several orders of magnitude higher than that of the traditional AMR. Òì³£AMRÊÇÖ¸ÔÚ¸ÆîÑ¿óÐÍÃÌÑõ»¯ÎïÖз¢Ïֵıȴ«Í³AMR´ó¼¸¸öÊýÁ¿¼¶µÄ¸÷ÏòÒìÐԴŵç×èЧӦ¡£ |
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- Ìû×Ó: 1157
- ÔÚÏß: 467.4Сʱ
- ³æºÅ: 758589
- ×¢²á: 2009-04-27
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2Â¥2013-04-20 20:14:44
hookhans
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
Farmer
- ·ÒëEPI: 263
- Ó¦Öú: 186 (¸ßÖÐÉú)
- ¹ó±ö: 0.142
- ½ð±Ò: 8012.5
- É¢½ð: 576
- ºì»¨: 51
- Ìû×Ó: 2085
- ÔÚÏß: 400.4Сʱ
- ³æºÅ: 2260260
- ×¢²á: 2013-01-25
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Ref. and discussion: 1¡£·ÒëÕâ¾ä»°°¡£º Ïë°ì·¨Ìá¸ßµç×èÂʱ仯¦¤¦ÑºÍ½µµÍ±¡Ä¤µÄ±¾µ×µç×èÂʦÑÊÇÌá¸ßMR²ÄÁÏÐÔÄܵÄÓÐЧ°ì·¨¡£½ü¼¸ÄêÀ´£¬Í¨¹ý¸ÄÉÆ½çÃæ´¦µç×ÓÉ¢ÉäÇé¿öµÄÑо¿ÒýÆðÁËÈËÃǵļ«´óÐËȤ[23-28]¡£ ÆÀÒé: Õâ¾ä»°Ç°ºóµÄ¹ØÏµÃ»ÓÐ˵Ã÷°×. ¼´, ¦¤¦ÑºÍ¦ÑÊÇÌá¸ßMR²ÄÁÏÐÔÄÜ, µ«ÕâЩºÍ½çÃæ´¦µç×ÓÉ¢ÉäÇé¿öµÄÑо¿Ö®¼äµÄ¹ØÏµÃ»ÓÐ˵Ã÷°×. Ï£Íû½øÒ»²½¸Ä½øÖ®. ÏÂÃæÊÇÐ޸Ľ¨Òé, ÇëÔÙ´Ë»ù´¡ÉϽøÒ»²½Õå×ÃÐÞ¸Ä: Increasing the resistivity changes ¦¤¦Ñ and decreasing the background resistivity ¦Ñ of the film is an effective method for enhancing the properties of the MR materials. And in recent years, great interest has been paid on further improving (the MR properties by tuning) the electron scattering at the interface. 2¡£ÈóÉ«ÈóɫӢÓ¶ººÅÈ¥µô¼´¿É Abnormal AMR refers to the AMR effect found in perovskite-type manganese oxides which is several orders of magnitude higher than that of the traditional AMR. Òì³£AMRÊÇÖ¸ÔÚ¸ÆîÑ¿óÐÍÃÌÑõ»¯ÎïÖз¢Ïֵıȴ«Í³AMR´ó¼¸¸öÊýÁ¿¼¶µÄ¸÷ÏòÒìÐԴŵç×èЧӦ¡£ |

3Â¥2013-04-21 09:25:56
ÄûÃÊÊ÷
гæ (ÖøÃûдÊÖ)
- Ó¦Öú: 7 (Ó×¶ùÔ°)
- ½ð±Ò: 134.1
- É¢½ð: 59
- ºì»¨: 1
- Ìû×Ó: 1157
- ÔÚÏß: 467.4Сʱ
- ³æºÅ: 758589
- ×¢²á: 2009-04-27
- רҵ: ½ðÊô¹¦ÄܲÄÁÏ
4Â¥2013-04-21 10:08:45
hookhans
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
Farmer
- ·ÒëEPI: 263
- Ó¦Öú: 186 (¸ßÖÐÉú)
- ¹ó±ö: 0.142
- ½ð±Ò: 8012.5
- É¢½ð: 576
- ºì»¨: 51
- Ìû×Ó: 2085
- ÔÚÏß: 400.4Сʱ
- ³æºÅ: 2260260
- ×¢²á: 2013-01-25
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¡¾´ð°¸¡¿Ó¦Öú»ØÌû
¡ï ¡ï ¡ï ¡ï ¡ï ¡ï ¡ï ¡ï ¡ï ¡ï
ÄûÃÊÊ÷: ½ð±Ò+10, ·ÒëEPI+1, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸, àÅ Ã²ËÆµç×èÂÊ¦Ñ Ö±½Ó˵resistivity¾Í¿ÉÒÔ 2013-04-21 10:34:55
ÄûÃÊÊ÷: ½ð±Ò+10, ·ÒëEPI+1, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸, àÅ Ã²ËÆµç×èÂÊ¦Ñ Ö±½Ó˵resistivity¾Í¿ÉÒÔ 2013-04-21 10:34:55
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ÕâÑù˵ÈçºÎ: In recent years, great interest has been paid on the study of the electron scattering at the interface due to its an effective method in enhancing the MR properties by increasing the resistivity changes ¦¤¦Ñ and decreasing the background resistivity ¦Ñ of the film. ±¾µ×µç×èÂÊ¦Ñ ·ÒëΪ background resistivity ¦Ñ »¹ÊÇ base resistivity ¦Ñ ?? |

5Â¥2013-04-21 10:31:17
hookhans
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
Farmer
- ·ÒëEPI: 263
- Ó¦Öú: 186 (¸ßÖÐÉú)
- ¹ó±ö: 0.142
- ½ð±Ò: 8012.5
- É¢½ð: 576
- ºì»¨: 51
- Ìû×Ó: 2085
- ÔÚÏß: 400.4Сʱ
- ³æºÅ: 2260260
- ×¢²á: 2013-01-25
- רҵ: ´ß»¯»¯Ñ§

6Â¥2013-04-21 10:37:23
ÄûÃÊÊ÷
гæ (ÖøÃûдÊÖ)
- Ó¦Öú: 7 (Ó×¶ùÔ°)
- ½ð±Ò: 134.1
- É¢½ð: 59
- ºì»¨: 1
- Ìû×Ó: 1157
- ÔÚÏß: 467.4Сʱ
- ³æºÅ: 758589
- ×¢²á: 2009-04-27
- רҵ: ½ðÊô¹¦ÄܲÄÁÏ
7Â¥2013-04-21 10:42:22
ÄûÃÊÊ÷
гæ (ÖøÃûдÊÖ)
- Ó¦Öú: 7 (Ó×¶ùÔ°)
- ½ð±Ò: 134.1
- É¢½ð: 59
- ºì»¨: 1
- Ìû×Ó: 1157
- ÔÚÏß: 467.4Сʱ
- ³æºÅ: 758589
- ×¢²á: 2009-04-27
- רҵ: ½ðÊô¹¦ÄܲÄÁÏ
8Â¥2013-04-21 10:43:25
hookhans
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
Farmer
- ·ÒëEPI: 263
- Ó¦Öú: 186 (¸ßÖÐÉú)
- ¹ó±ö: 0.142
- ½ð±Ò: 8012.5
- É¢½ð: 576
- ºì»¨: 51
- Ìû×Ó: 2085
- ÔÚÏß: 400.4Сʱ
- ³æºÅ: 2260260
- ×¢²á: 2013-01-25
- רҵ: ´ß»¯»¯Ñ§

9Â¥2013-04-21 10:53:06













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