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分享一篇27页的Al2O3薄膜综述
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Status and prospects of Al2O3-based surface passivation schemes G. Dingemans and W. M. M. Kessels Department of Applied Physics, Eindhoven University of Technology 主要讲述氧化铝薄膜应用于太阳能电池表面钝化，介绍十分全面，涉及了多种薄膜沉积技术，对介电膜在其他方面的应用也有一定指导意义 The reduction in electronic recombination losses by the passivation of silicon surfaces is a critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) emerged as a novel solution for the passivation of p- and n-type crystalline Si (c-Si) surfaces. Today, high efficiencies have been realized by the implementation of ultrathin Al2O3 films in laboratory-type and industrial solar cells. This article reviews and summarizes recent work concerning Al2O3 thin films in the context of Si photovoltaics. Topics range from fundamental aspects related to material, interface, and passivation properties to synthesis methods and the implementation of the films in solar cells. Al2O3 uniquely features a combination of field-effect passivation by negative fixed charges, a low interface defect density, an adequate stability during processing, and the ability to use ultrathin films down to a few nanometers in thickness. Although various methods can be used to synthesize Al2O3, this review focuses on ALD—a new technology in the field of c-Si photovoltaics. The authors discuss how the unique features of ALD can be exploited for interface engineering and tailoring the properties of nanolayer surface passivation schemes while also addressing its compatibility with high-throughput manufacturing. The recent progress achieved in the field of surface passivation allows for higher efficiencies of industrial solar cells, which is critical for realizing lower-cost solar electricity in the near future I. INTRODUCTION II. SURFACE PASSIVATION: BASICS AND APPLICATIONS A. Surface passivation mechanisms B. Surface passivation materials 1. SiO2 2. a-SiNx:H 3. a-Si:H C. Surface passivation in high-efficiency solar cells III. Al2O3 PROPERTIES AND SYNTHESIS TECHNIQUES A. Synthesis methods 1. Atomic layer deposition 2. PECVD 3. Other synthesis methods B. Material and interface properties of Al2O3 on Si IV. ATOMIC LAYER DEPOSITION OF Al2O3 A. Surface chemistry B. ALD process parameters C. Substrate temperature V. SURFACE PASSIVATION BYAl2O3 A. Passivation performance B. Effect of annealing on chemical and field-effect passivation C. Effect of film thickness D. Fundamental mechanisms 1. Defect passivation 2. Negative charge formation VI. IMPLEMENTATION IN SOLAR CELLS A. Stability 1. UV stability 2. Firing stability B. Surface passivation stacks 1. Al2O3/a-SiNx stacks 2. SiO2/Al2O3 stacks C. Industrial-scale ALD 1. Batch ALD 2. Spatial ALD 3. ALD or PECVD? D. Alternative precursors 1. Solar grade TMA 2. DMAI VII. SOLAR CELLS FEATURING Al2O3 A. p-type Si cells B. n-type Si cells VIII. CONCLUDING REMARKS ACKNOWLEDGMENTS 有做电池钝化的朋友也可以进来聊聊[ Last edited by bazhuayuyu on 2012-9-22 at 12:03 ] |
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2012-09-21 15:43:43, 2.68 M
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2012-09-22 19:49
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五星好评 顶一下，感谢分享！
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2012-12-16 21:02
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顶一下，感谢分享！
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