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P-Type Nitrogen-Doped ZnO Nanoparticles Stable under Ambient Conditions Zinc oxide is considered as a very promising material for optoelectronics. However, to date, the difficulty in producing stable p-type ZnO is a bottleneck, which hinders the advent of ZnO-based devices. In that context, nitrogen-doped zinc oxide receives much attention. However, numerous reviews report the controversial character of p-type conductivity in N-doped ZnO, and recent theoretical contributions explain that N-doping alone cannot lead to p-typeness in Zn-rich ZnO. We report here that the ammonolysis at low temperature of ZnO2 yields pure wurtzite-type N-doped ZnO nanoparticles with an extraordinarily large amount of Zn vacancies (up to 20%). Electrochemical and transient spectroscopy studies demonstrate that these Zn-poor nanoparticles exhibit a p-type conductivity that is stable over more than 2 years under ambient conditions. Áí¸½Ò»¸öÂÛ̳ÄÚ¿¼¹ÅÌû×Ó£¬¿ÆÑ§×ÜÊÇÔÚ²»¶ÏµÄÕùÂÛÖеõ½·¢Õ¹£¬¸ÐÐËȤµÄ¿ÉÒÔ¿´Ï¡£ ¸Ðлdawnlight °æÖ÷£¬Î´¸æÖªµÄÇé¿öÏÂÒýÓôËÌû£¬ ¡¾½»Á÷¡¿N²ôÔÓ²»ÄÜÐγÉPÐÍZnO£¿ http://muchong.com/bbs/viewthread.php?tid=1816406 ************************************************************* [ Last edited by nofrunolif on 2012-4-12 at 10:20 ] |
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