| 查看: 238 | 回复: 0 | ||
| 当前主题已经存档。 | ||
[资源]
<<MOS (Metal Oxide Semiconductor) Physics and Technology>>
|
||
|
MOS (Metal Oxide Semiconductor) Physics and Technology Publisher: Wiley-Interscience | Pages: 928 | 1982-03-04 | ISBN 0471085006 | PDF | 31 MB Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. http://rapidshare.com/files/157231067/0471085006.rar http://www.filefactory.com/file/ca5513/n/0471085006_rar |
回复此楼» 猜你喜欢
售SCI-T0P文章，我:8O.5.5.1.O.54,科目齐全,可+急
已经有11人回复
-
2027博士申请-临床检验诊断学、病原生物学、微生物方向
已经有4人回复
-
售SCI-T0P文章，我:8O.5.5.1.O.54,科目齐全,可+急
已经有17人回复
-
售SCI一区T0P文章，我:8.O.55.1.O.54,科目齐全,可+急
已经有10人回复
-
售SCI文章，我:8O.5.5.1O.54,科目全,可十急
已经有22人回复
-
越来越担心硕士毕业后没有竞争力了
已经有14人回复
-
论文的挂名怎么评判贡献？基金申请中，排名第一的挂名文章
已经有3人回复
-
申博自荐 2篇一区TOP+1篇EI+2公开发明专利 2027博士申请
已经有3人回复
-
闲聊
已经有6人回复
-
申博求助
已经有4人回复