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分类 共搜索到 754 个相关话题(最多显示前5000个) 作者 最后发表
文献求助 外文期刊求助
030802https://pubs.aip.org/avs/jvb/article-abstract/41/3/030802/2884489/Radiation-damage-in-GaN-AlGaN-and-SiC-electronic?redirectedFrom=fulltext其它外文期刊AIPPublishing
guopengzhen 2026-05-21 10:05
文献求助 适用于日盲紫外探测器的高Al组分n型AlGaN的生长
刘成适用于日盲紫外探测器的高Al组分n型AlGaN的生长华中科技大学2011all
gavinqiqi 2026-04-28 09:36
文献求助 246nm pin型背照式GaN/AlGaN+p-i-n紫外探测器的制备与性能
颜廷静246nmpin型背照式GaN/AlGaN+p-i-n紫外探测器的制备与性能红外与激光工程2011all
gavinqiqi 2026-04-28 08:16
博后之家 广东工业大学宽禁带半导体器件与集成研究团队诚聘博士后【长期...
二、招聘方向AlGaN、GaN功率电子器件与集成三、岗位职责1.开展AlGaN、GaN宽禁带半导体功率器件相关研究,涵盖器件设计、TCAD仿真、工艺制备、封装测试等全流程工作;2.参与国家自然科学基金...
hfp_qt 2026-04-24 03:10
材料综合 硅器件薄膜技术:单层与多层薄膜的分层统一模型
\subsection{异质结极化效应}对于具有自发极化和压电效应的异质结(如algan/gan),极化强度分解为各分层级数的贡献:\begin{equation}\boxed{\mathbf{p}_{\text{total}}=\sum_{k=0}^{n-1}\...
lion_how 2026-04-08 05:52
金属 硅器件薄膜技术:单层与多层薄膜的分层统一模型
\subsection{异质结极化效应}对于具有自发极化和压电效应的异质结(如algan/gan),极化强度分解为各分层级数的贡献:\begin{equation}\boxed{\mathbf{p}_{\text{total}}=\sum_{k=0}^{n-1}\...
lion_how 2026-04-08 05:56
功能材料 Highly efficient,deep-ultraviolet luminescence in hBN moiré...
theyemitintensedeep-ultravioletluminescenceintheextremewavelengthbandsfrom215to240nanometers,exceedingthatofstate-of-the-artconventionalaluminumgalliumnitride(AlGaN)...
yexuqing 2026-03-22 01:47
文献求助 求助 高致密生物分子膜栅AlGaN/GaN HEMT生化传感器研究
顾智琦高致密生物分子膜栅AlGaN/GaNHEMT生化传感器研究中国科学技术大学年期:2021年第09期2021年第09期10.27517/d.cnki.gzkju.2021.000684
AdolphYang 2026-02-27 09:59
文献求助 Progress in efficient doping of Al-rich AlGaN
JiamingWangProgressinefficientdopingofAl-richAlGaNJournalofSemiconductors2025all
gavinqiqi 2026-01-22 06:13
文献求助 SiC substrate miscut on the epitaxy and microstructure of AlGaN/
A.Gkanatsioua,Ch.B.Lioutasa,N.Frangisa,E.K.Polychroniadisa,P.Prystawkobc,M.Leszczynskibc,Th.Altantzisd,G.VanTendeloodInfluenceof4H-...
zuowansheng 2025-12-27 01:38
文献求助 High-Power AlGaN-Based Ultrathin Tunneling Junction Deep ...
ShengjunZhouHigh-PowerAlGaN-BasedUltrathinTunnelingJunctionDeepUltravioletLight-EmittingDiodesLaser&PhotonicsReviews2023allhttps:/doi.org/10.1002/lpor.202300464
gavinqiqi 2025-12-24 08:30
无机/物化 求助样品
求助几片表面厚度是100nm以上,Al组分不超过0.4的uid-AlGaN样品,die的大小超过0.8cm*0.8cm即可
洛宸宸呀 2025-12-15 02:57
文献求助 Key temperature-dependent characteristics of AlGaN-based UV-...
ZiyiZhangKeytemperature-dependentcharacteristicsofAlGaN-basedUV-Claserdiodeanddemonstrationofroom-temperaturecontinuous-wavelasingAppl.Phys.Lett.121,222103(2022)2022all
gavinqiqi 2025-12-12 05:15
文献求助 High temperature stability of Ti/Al/Pd/Au ...AlGaN/GaN HEMTs
RuizheZhangORCIDlogo;XiaoqiangHeORCIDlogo;KaiyuWangORCIDlogo;JianchaoWang;JiaqiGuo;AilingZhou;ShengZhangCorrespondingAuthorORCIDlogo;YichuanZhang;YankuiLi;...SenHuangORCIDlogo;...
laigeguilai 2025-11-03 03:05
文献求助 求助文献:Effect of AlN and AlGaN Interlayers on AlScN/GaN ...
IsabelStreicherEffectofAlNandAlGaNInterlayersonAlScN/GaNHeterostructuresGrownbyMetal–OrganicChemicalVaporDepositionCrystalGrowth&Design20232023,23,2,782–791...
jackwang789 2025-08-24 08:03
绿色求助(高悬赏) AlGaN-Based Solar-Blind Ultraviolet Detector with a Response...
张冉AlGaN-BasedSolar-BlindUltravioletDetectorwithaResponseWavelengthof217nmPhysicaStatusSolidiA-applicationsAndMaterialsScience2023allhttps:/doi.org/10.1002/pssa.202300231
gavinqiqi 2025-08-19 03:53
文献求助 A 250 nm high-performance AlGaN-based metal-semiconductor-...
GZhengA250nmhigh-performanceAlGaN-basedmetal-semiconductor-metaldeepultravioletdetectorMicroandnanostructures202310.1016/j.micrna.2023.207680
gavinqiqi 2025-08-19 03:53
文献求助 Plasma atomic layer etching of GaN/AlGaN materials and ...
LuluGuan,XingyuLi,DongchenChe,KaidongXuandShiweiZhuangPlasmaatomiclayeretchingofGaN/AlGaNmaterialsandapplication:AnoverviewJournalofSemiconductors202211310110.1088/1674-4926/43...
2013youthlee 2025-07-18 09:33
文献求助 Growth of low-dislocation-density AlGaN using Mg-doped AlN ...
T.AsaiGrowthoflow-dislocation-densityAlGaNusingMg-dopedAlNunderlyinglayerphysicastatussolidic2010all
gavinqiqi 2025-07-10 01:29
文献求助 Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/...
JunyaHakamataGrowthofHigh-QualityAlNandAlGaNFilmsonSputteredAlN/SapphireTemplatesviaHigh-TemperatureAnnealingphysicastatussolidi(a)2018all
gavinqiqi 2025-07-10 01:21
文献求助 Improved light emission through an AlGaN coalescence layer ...
Young-SunKwakImprovedlightemissionthroughanAlGaNcoalescencelayerof365-nmultravioletlighting-emittingdiodesonpatternedsapphiresubstratesJournaloftheKoreanPhysicalSociety2013...
gavinqiqi 2025-05-16 02:21
文献求助 Beyond 53%internal quantum efficiency in a AlGaN quantum ...
M.AjmalKhanBeyond53%internalquantumefficiencyinaAlGaNquantumwellat326?nmUVAemissionandsingle-peakoperationofUVALEDOpticsLettersVol.45,Issue2,pp.495-498(2020)2020allhttps:/doi....
gavinqiqi 2025-05-16 07:23
文献求助 The incorporation of AlScN ferroelectric ...dielectric in AlGaN/GaN...
ZihuiZhao,YijunDai,FanpingMeng,LiChen,KunziLiu,TianLuo,ZhehanYu,QikunWang,ZhenhaiYang,JijunZhangTheincorporationofAlScNferroelectricgatedielectricinAlGaN/GaN-...
h_wky_h 2025-05-13 08:45
文献求助 求助文献:N-polar GaN/AlGaN/AlN high electron mobility ...
EungkyunKimN-polarGaN/AlGaN/AlNhighelectronmobilitytransistorsonsingle-crystalbulkAlNsubstratesAppl.Phys.Lett.122,092104(2023)2023122...
JackWang78 2025-04-12 02:09
文献求助 AlGaN/GaN HEMT材料及微波功率器件研究
罗卫军AlGaN/GaNHEMT材料及微波功率器件研究中国科学院半导体研究所20080-200https://d.wanfangdata.com.cn/thesis/ChhUaGVzaXNOZXdTMjAyNDA5MjAxNTE3MjUSCFkxNjI2ODg1GghtbzF6dzNndw%3D%3D...
h_wky_h 2025-04-12 12:51