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分类 共搜索到 743 个相关话题(最多显示前5000个) 作者 最后发表
无机/物化 求助样品
求助几片表面厚度是100nm以上,Al组分不超过0.4的uid-AlGaN样品,die的大小超过0.8cm*0.8cm即可
洛宸宸呀 2025-12-15 02:57
文献求助 Key temperature-dependent characteristics of AlGaN-based UV-...
ZiyiZhangKeytemperature-dependentcharacteristicsofAlGaN-basedUV-Claserdiodeanddemonstrationofroom-temperaturecontinuous-wavelasingAppl.Phys.Lett.121,222103(2022)2022all
gavinqiqi 2025-12-12 05:15
文献求助 High temperature stability of Ti/Al/Pd/Au ...AlGaN/GaN HEMTs
RuizheZhangORCIDlogo;XiaoqiangHeORCIDlogo;KaiyuWangORCIDlogo;JianchaoWang;JiaqiGuo;AilingZhou;ShengZhangCorrespondingAuthorORCIDlogo;YichuanZhang;YankuiLi;...SenHuangORCIDlogo;...
laigeguilai 2025-11-03 03:05
文献求助 求助文献:Effect of AlN and AlGaN Interlayers on AlScN/GaN ...
IsabelStreicherEffectofAlNandAlGaNInterlayersonAlScN/GaNHeterostructuresGrownbyMetal–OrganicChemicalVaporDepositionCrystalGrowth&Design20232023,23,2,782–791...
jackwang789 2025-08-24 08:03
绿色求助(高悬赏) AlGaN-Based Solar-Blind Ultraviolet Detector with a Response...
张冉AlGaN-BasedSolar-BlindUltravioletDetectorwithaResponseWavelengthof217nmPhysicaStatusSolidiA-applicationsAndMaterialsScience2023allhttps:/doi.org/10.1002/pssa.202300231
gavinqiqi 2025-08-19 03:53
文献求助 A 250 nm high-performance AlGaN-based metal-semiconductor-...
GZhengA250nmhigh-performanceAlGaN-basedmetal-semiconductor-metaldeepultravioletdetectorMicroandnanostructures202310.1016/j.micrna.2023.207680
gavinqiqi 2025-08-19 03:53
文献求助 Plasma atomic layer etching of GaN/AlGaN materials and ...
LuluGuan,XingyuLi,DongchenChe,KaidongXuandShiweiZhuangPlasmaatomiclayeretchingofGaN/AlGaNmaterialsandapplication:AnoverviewJournalofSemiconductors202211310110.1088/1674-4926/43...
2013youthlee 2025-07-18 09:33
文献求助 Growth of low-dislocation-density AlGaN using Mg-doped AlN ...
T.AsaiGrowthoflow-dislocation-densityAlGaNusingMg-dopedAlNunderlyinglayerphysicastatussolidic2010all
gavinqiqi 2025-07-10 01:29
文献求助 Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/...
JunyaHakamataGrowthofHigh-QualityAlNandAlGaNFilmsonSputteredAlN/SapphireTemplatesviaHigh-TemperatureAnnealingphysicastatussolidi(a)2018all
gavinqiqi 2025-07-10 01:21
文献求助 Improved light emission through an AlGaN coalescence layer ...
Young-SunKwakImprovedlightemissionthroughanAlGaNcoalescencelayerof365-nmultravioletlighting-emittingdiodesonpatternedsapphiresubstratesJournaloftheKoreanPhysicalSociety2013...
gavinqiqi 2025-05-16 02:21
文献求助 Beyond 53%internal quantum efficiency in a AlGaN quantum ...
M.AjmalKhanBeyond53%internalquantumefficiencyinaAlGaNquantumwellat326?nmUVAemissionandsingle-peakoperationofUVALEDOpticsLettersVol.45,Issue2,pp.495-498(2020)2020allhttps:/doi....
gavinqiqi 2025-05-16 07:23
文献求助 The incorporation of AlScN ferroelectric ...dielectric in AlGaN/GaN...
ZihuiZhao,YijunDai,FanpingMeng,LiChen,KunziLiu,TianLuo,ZhehanYu,QikunWang,ZhenhaiYang,JijunZhangTheincorporationofAlScNferroelectricgatedielectricinAlGaN/GaN-...
h_wky_h 2025-05-13 08:45
文献求助 求助文献:N-polar GaN/AlGaN/AlN high electron mobility ...
EungkyunKimN-polarGaN/AlGaN/AlNhighelectronmobilitytransistorsonsingle-crystalbulkAlNsubstratesAppl.Phys.Lett.122,092104(2023)2023122...
JackWang78 2025-04-12 02:09
文献求助 AlGaN/GaN HEMT材料及微波功率器件研究
罗卫军AlGaN/GaNHEMT材料及微波功率器件研究中国科学院半导体研究所20080-200https://d.wanfangdata.com.cn/thesis/ChhUaGVzaXNOZXdTMjAyNDA5MjAxNTE3MjUSCFkxNjI2ODg1GghtbzF6dzNndw%3D%3D...
h_wky_h 2025-04-12 12:51
博后之家 厦门大学宽禁带半导体研究组诚聘博士后
在高Al组分AlGaN量子结构等设计与生长及其深紫外表面等离子激元光源研发方面,取得了系列开拓性成果,被同行称为“表面等离子激元深紫外光子学研究第一人”。在新型太阳能电池研发方面,...
lixbreeze 2025-03-31 01:27
文献求助 Plasma atomic layer etching of GaN/AlGaN materials and ...
LuluGuan,XingyuLi,DongchenChe,KaidongXuandShiweiZhuangPlasmaatomiclayeretchingofGaN/AlGaNmaterialsandapplication:AnoverviewJournalofSemiconductors202211310110.1088/1674-4926/43...
2013youthlee 2025-03-13 07:07
计算模拟 求问会TCAD模拟半导体器件的大佬
目前用的代码直接就是例子中的AlGaN/GaN的代码,将其中器件的尺寸修改成了我实验中所用的器件尺寸,之后是可以正常运行输出的。之后就想给该器件加上自定义的介电层,但是一旦加上介电层...
one_007 2025-01-24 04:23
微米和纳米 微纳器件加工,单步多步工艺(详细版)
RIE慢速刻蚀、GaN/GaAs可控刻蚀、IBE、AlN刻蚀、SiC刻蚀等(4)键合封装工艺倒装焊键合、电化学沉积、金线引线键合、低熔点金属回流、InP/GaAs解理划片机、软硬刀切割机、晶圆键合机(4、6、...
Andre_W 2025-01-08 11:01
文献求助 High rate and selective etching of GaN,AlGaN,and AlN using ...
S.A.Smith;C.A.Wolden;M.D.Bremser;A.D.Hanser;...W.V.LampertHighrateandselectiveetchingofGaN,AlGaN,andAlNusinganinductivelycoupledplasmaAppl.Phys.Lett.19973631–3633...
417717458 2024-12-07 01:52
文献求助完结子版 Enhanced light extraction efficiency of ...AlGaN DUV light...
RichardFloyd1,MikhailGaevski1,KamalHussain1,AbdullahMamun1,MVSChandrashekhar1,GrigorySimin1andAsifKhanEnhancedlightextractionefficiencyofmicropixelgeometryAlGaNDUVlight-...
2013youthlee 2024-10-30 12:24
绿色求助(高悬赏) 1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on ...
ShibataD,KajitaniR,OgawaM,etal.1.7kV/1.0mΩcm2normally-offverticalGaNtransistoronGaNsubstratewithregrownp-GaN/AlGaN/GaNsemipolargatestructureElectronDevicesMeeting.IEEE,2017....
Bright-Ma 2024-07-25 01:20
文献求助 文献求助:高性能1mm SiC基AlGaN/GaN功率HEMT研制
罗卫军;陈晓娟;李成瞻;刘新宇;和致经;魏珂;梁晓新;王晓亮;高性能1mmSiC基AlGaN/GaN功率HEMT研制《半导体学报》2006第11期|1981-1983|共3页
ymiskiller 2024-07-09 06:32
文献求助 Organized AlGaN Quantum Wire Array
ChenguangHeEfficientDeepUltravioletEmissionfromSelf-OrganizedAlGaNQuantumWireArrayGrownOnUltrathinStep-bunchedAlNTemplatesCryst.GrowthDes2024allhttps:/doi.org/10.1021/acs.cgd....
gavinqiqi 2024-04-24 01:19
绿色求助(高悬赏) 求一篇文献!
LiubingWang;...XuelinYangImprovingLightExtractionEfficiencyofAlGaN-BasedDeepUltravioletLight-EmittingDiodesbyCombiningThinningp-AlGaN/p-GaNLayerWithNi/Au/AlHigh-...
highlywood 2024-02-27 02:08
有奖问答 异质结不同材料引起的压电场问题?
大家好,我想问下在InGaN/GaNMQW中InGaN上长AlGaN时为什么压电场会变大?我的理解是InGaN在GaN上生长会造成压应变引起的电场变大,但是在InGaN上长AlGaN会造成张应变引起的电场变大,压应变...
taozhangfeng 2024-02-01 03:04