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分类	共搜索到 750 个相关话题(最多显示前5000个)	作者	最后发表

材料综合	硅器件薄膜技术：单层与多层薄膜的分层统一模型 \subsection{异质结极化效应}对于具有自发极化和压电效应的异质结（如algan/gan），极化强度分解为各分层级数的贡献：\begin{equation}\boxed{\mathbf{p}_{\text{total}}=\sum_{k=0}^{n-1}\...	lion_how	2026-04-08 05:52
金属	硅器件薄膜技术：单层与多层薄膜的分层统一模型 \subsection{异质结极化效应}对于具有自发极化和压电效应的异质结（如algan/gan），极化强度分解为各分层级数的贡献：\begin{equation}\boxed{\mathbf{p}_{\text{total}}=\sum_{k=0}^{n-1}\...	lion_how	2026-04-08 05:56
功能材料	Highly efficient,deep-ultraviolet luminescence in hBN moiré... theyemitintensedeep-ultravioletluminescenceintheextremewavelengthbandsfrom215to240nanometers,exceedingthatofstate-of-the-artconventionalaluminumgalliumnitride(AlGaN)...	yexuqing	2026-03-22 01:47
文献求助	求助高致密生物分子膜栅AlGaN/GaN HEMT生化传感器研究顾智琦高致密生物分子膜栅AlGaN/GaNHEMT生化传感器研究中国科学技术大学年期：2021年第09期2021年第09期10.27517/d.cnki.gzkju.2021.000684	AdolphYang	2026-02-27 09:59
文献求助	Progress in efficient doping of Al-rich AlGaN JiamingWangProgressinefficientdopingofAl-richAlGaNJournalofSemiconductors2025all	gavinqiqi	2026-01-22 06:13
文献求助	SiC substrate miscut on the epitaxy and microstructure of AlGaN/ A.Gkanatsioua,Ch.B.Lioutasa,N.Frangisa,E.K.Polychroniadisa,P.Prystawkobc,M.Leszczynskibc,Th.Altantzisd,G.VanTendeloodInfluenceof4H-...	zuowansheng	2025-12-27 01:38
文献求助	High-Power AlGaN-Based Ultrathin Tunneling Junction Deep ... ShengjunZhouHigh-PowerAlGaN-BasedUltrathinTunnelingJunctionDeepUltravioletLight-EmittingDiodesLaser&PhotonicsReviews2023allhttps:/doi.org/10.1002/lpor.202300464	gavinqiqi	2025-12-24 08:30
无机/物化	求助样品求助几片表面厚度是100nm以上，Al组分不超过0.4的uid-AlGaN样品，die的大小超过0.8cm*0.8cm即可	洛宸宸呀	2025-12-15 02:57
文献求助	Key temperature-dependent characteristics of AlGaN-based UV-... ZiyiZhangKeytemperature-dependentcharacteristicsofAlGaN-basedUV-Claserdiodeanddemonstrationofroom-temperaturecontinuous-wavelasingAppl.Phys.Lett.121,222103(2022)2022all	gavinqiqi	2025-12-12 05:15
文献求助	High temperature stability of Ti/Al/Pd/Au ...AlGaN/GaN HEMTs RuizheZhangORCIDlogo;XiaoqiangHeORCIDlogo;KaiyuWangORCIDlogo;JianchaoWang;JiaqiGuo;AilingZhou;ShengZhangCorrespondingAuthorORCIDlogo;YichuanZhang;YankuiLi;...SenHuangORCIDlogo;...	laigeguilai	2025-11-03 03:05
文献求助	求助文献:Effect of AlN and AlGaN Interlayers on AlScN/GaN ... IsabelStreicherEffectofAlNandAlGaNInterlayersonAlScN/GaNHeterostructuresGrownbyMetal–OrganicChemicalVaporDepositionCrystalGrowth&Design20232023,23,2,782–791...	jackwang789	2025-08-24 08:03
绿色求助(高悬赏)	AlGaN-Based Solar-Blind Ultraviolet Detector with a Response... 张冉AlGaN-BasedSolar-BlindUltravioletDetectorwithaResponseWavelengthof217nmPhysicaStatusSolidiA-applicationsAndMaterialsScience2023allhttps:/doi.org/10.1002/pssa.202300231	gavinqiqi	2025-08-19 03:53
文献求助	A 250 nm high-performance AlGaN-based metal-semiconductor-... GZhengA250nmhigh-performanceAlGaN-basedmetal-semiconductor-metaldeepultravioletdetectorMicroandnanostructures202310.1016/j.micrna.2023.207680	gavinqiqi	2025-08-19 03:53
文献求助	Plasma atomic layer etching of GaN/AlGaN materials and ... LuluGuan,XingyuLi,DongchenChe,KaidongXuandShiweiZhuangPlasmaatomiclayeretchingofGaN/AlGaNmaterialsandapplication:AnoverviewJournalofSemiconductors202211310110.1088/1674-4926/43...	2013youthlee	2025-07-18 09:33
文献求助	Growth of low-dislocation-density AlGaN using Mg-doped AlN ... T.AsaiGrowthoflow-dislocation-densityAlGaNusingMg-dopedAlNunderlyinglayerphysicastatussolidic2010all	gavinqiqi	2025-07-10 01:29
文献求助	Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/... JunyaHakamataGrowthofHigh-QualityAlNandAlGaNFilmsonSputteredAlN/SapphireTemplatesviaHigh-TemperatureAnnealingphysicastatussolidi(a)2018all	gavinqiqi	2025-07-10 01:21
文献求助	Improved light emission through an AlGaN coalescence layer ... Young-SunKwakImprovedlightemissionthroughanAlGaNcoalescencelayerof365-nmultravioletlighting-emittingdiodesonpatternedsapphiresubstratesJournaloftheKoreanPhysicalSociety2013...	gavinqiqi	2025-05-16 02:21
文献求助	Beyond 53%internal quantum efficiency in a AlGaN quantum ... M.AjmalKhanBeyond53%internalquantumefficiencyinaAlGaNquantumwellat326?nmUVAemissionandsingle-peakoperationofUVALEDOpticsLettersVol.45,Issue2,pp.495-498(2020)2020allhttps:/doi....	gavinqiqi	2025-05-16 07:23
文献求助	The incorporation of AlScN ferroelectric ...dielectric in AlGaN/GaN... ZihuiZhao,YijunDai,FanpingMeng,LiChen,KunziLiu,TianLuo,ZhehanYu,QikunWang,ZhenhaiYang,JijunZhangTheincorporationofAlScNferroelectricgatedielectricinAlGaN/GaN-...	h_wky_h	2025-05-13 08:45
文献求助	求助文献:N-polar GaN/AlGaN/AlN high electron mobility ... EungkyunKimN-polarGaN/AlGaN/AlNhighelectronmobilitytransistorsonsingle-crystalbulkAlNsubstratesAppl.Phys.Lett.122,092104(2023)2023122...	JackWang78	2025-04-12 02:09
文献求助	AlGaN/GaN HEMT材料及微波功率器件研究罗卫军AlGaN/GaNHEMT材料及微波功率器件研究中国科学院半导体研究所20080-200https://d.wanfangdata.com.cn/thesis/ChhUaGVzaXNOZXdTMjAyNDA5MjAxNTE3MjUSCFkxNjI2ODg1GghtbzF6dzNndw%3D%3D...	h_wky_h	2025-04-12 12:51
博后之家	厦门大学宽禁带半导体研究组诚聘博士后在高Al组分AlGaN量子结构等设计与生长及其深紫外表面等离子激元光源研发方面，取得了系列开拓性成果，被同行称为“表面等离子激元深紫外光子学研究第一人”。在新型太阳能电池研发方面，...	lixbreeze	2025-03-31 01:27
文献求助	Plasma atomic layer etching of GaN/AlGaN materials and ... LuluGuan,XingyuLi,DongchenChe,KaidongXuandShiweiZhuangPlasmaatomiclayeretchingofGaN/AlGaNmaterialsandapplication:AnoverviewJournalofSemiconductors202211310110.1088/1674-4926/43...	2013youthlee	2025-03-13 07:07
计算模拟	求问会TCAD模拟半导体器件的大佬目前用的代码直接就是例子中的AlGaN/GaN的代码，将其中器件的尺寸修改成了我实验中所用的器件尺寸，之后是可以正常运行输出的。之后就想给该器件加上自定义的介电层，但是一旦加上介电层...	one_007	2025-01-24 04:23
微米和纳米	微纳器件加工，单步多步工艺(详细版) RIE慢速刻蚀、GaN/GaAs可控刻蚀、IBE、AlN刻蚀、SiC刻蚀等（4）键合封装工艺倒装焊键合、电化学沉积、金线引线键合、低熔点金属回流、InP/GaAs解理划片机、软硬刀切割机、晶圆键合机(4、6、...	Andre_W	2025-01-08 11:01