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法国INSA LYON与CSC公派留学基金委合作博士项目招生
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法国insa lyon的里昂纳米科技实验室有两个csc的公派博士生名额(2020年秋季入学)，主要研究方向为宽禁带半导体的电学和光学性质表征。具体信息如下，欢迎感兴趣的人直接与国外导师邮件联系，或者与我联系。 课题1：基于扫描探针显微镜的纳米尺度宽禁带半导体的电学性质表征 studies of electronic properties of wide band gap semiconductor related materials and nanostructures by electrical mode scanning probe microscopy for electronic and optoelectronic device applications 导师姓名：Prof. georges bremond 邮箱：georges.bremond@insa-lyon.fr 简要介绍：Expert in electronics and optoelectronics materials and devices - InP, GaAs, ZnO, GaN and related materials wide band gap╟ solid state physics ╟semiconductor and surface physics ╟ expert in scanning probe microscopy for electrical property analysis, optical ( PL， FTIR， OA) and electrical ( I-V, C-V admittance, capacitance, DLTS-DLOS) spectroscopies on semiconductor nanostructures, quantum dots, nanowires, material and device characterization.he has recently successfully developed scanning capacitance microscopy and spectroscopy (SCM-SCS), scanning spreading resistance microscopy (SSRM) and conductive afm ( CAFM) on ZnO nanowires. 课题简介：The III-N semiconductor (nitrides) reach a real maturity in growth control and shown very exciting electronic and optoelectronic properties. In addition the use of nanowires (1D) allows to solve some problems associated with two dimensional ( 2D) due to strain relaxation in 2D layers at the origin of structural defects, electrical doping and light extraction. It is expected a considerable improvement of performances in the optoelectronic field of lighting and photovoltaic, two major domains for decreasing world energy consumption and producing “green electricity”. These nanowire structures need new analysis methodologies to control their electronic properties. We propose to contribute to understand the properties of wide band gap nanowires by developing electrical characterization techniques based on space charge zone analysis. G. Bremond has strong competences of this approach including electrical spectroscopy called deep level transient spectroscopy (DLTS-DLOS) based on capacitance and current transient analysis on Schottky barriers and p/n junctions. His team develops original nanoscale electrical measures based on atomic force microscopy (AFM) using conductive AFM tip (SCM-scanning capacitance microscopy, SSRM- spreading resistance ) on quantum dots and more recently on nanowires. One of the main objectives of this thesis is to extend space charge measurement on 1D nanowires for a better control of their electronic properties. 要求：High general educational level in physics, mainly in solid-state and surface physics and in electronics . Good training in measurement techniques and instrumentation during internship training- Training in atomic force microscopy instrumentation and in semiconductor physics and technology processes are welcome. 课题2：硅上外延β-Ga2O3 的电学与光学表征 electro-optical characterization of β-Ga2O3 epilayers grown on silicon 导师姓名：Prof. jean-marie bluet 邮箱：jean-marie.bluet@insa-lyon.fr 简要介绍：Expert in electronics and optoelectronics materials and devices based on SiC, GaN and related materials wide band gap– Solid state physics –Semiconductor and surface physics – Expert in optical ( PL, Raman, FTIR) and electrical ( I-V, C-V, admittance , capacitance, DLTS, DLOS) spectroscopies on semiconductor nanostructures, material and device characterization. 课题简介：Gallium oxide (Ga2O3)under its monoclinic beta phase which is thermodynamically stable under ambient conditions, is a promising material for various applications in devices. its transparency even to uv light due to its wide energy band gap of 4,9 eV gives prospective applications in uv applications,its high critical field of 8 mV/cm is promising for high voltage power applications and also in transparent contact when doped. other advantages come from the availability of cheap bulk substrates, a large doping range for n-type and various existing epitaxy techniques (PVD， MOCVD， MBE...). there are however severe bottlenecks for its development: 1) low value of thermal conductivity of Ga2O3 substrates, 2) difficulty to turn on of p-type doping, 3) high concentration of traps affecting the mobility, the carrier lifetime, the compensation of doping level and the voltage breakdown. The focus of this thesis is to investigate by extensive and complementary characterizations the nature of native and impurity related defect centers in n ( or p if available) type epi-layer grown on Si substrates in order to prevent disadvantage (1) by MOCVD ( coll. GEMAC laboratory from Versailles university). The principal techniques we apply are admittance, deep level transient and optical spectroscopy (DLTS-DLOS) to access respectively to shallow and deep levels traps within the whole wide bandgap. 要求：High general educational level in physics, mainly in solid-state and surface physics and in semiconductor physics . Good training in measurement techniques and apparatus instrumentation in semiconductor domain during his university cursus or during internship trainings- Training in semiconductor physics, devices and technology processes are welcome. 合作项目介绍及流程（以去年为例）：http://www-csc.utt.fr/Questions_r%C3%A9ponses.htm 项目网址：http://www-csc.utt.fr/ 里昂纳米科技实验室网址：http://www.inl.cnrs.fr insa-lyon 网址：http://www.insa-lyon.fr lyon城市：https://en.lyon-france.com/ 更多课题和导师信息请查看附件。 欢迎有意者直接与国外导师邮件联系。 |
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2019-06-27 20:22
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2019-06-27 23:03
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