昆士兰科技大学的寇良志导师诚招PhD!!
要求:
雅思6.5或者托福90(雅思单科不低于6分,托福单科不低于20;最好能在今年9-10月份之前考过),有力学物理化学或者计算材料背景,本科硕士GPA高者优先。昆士兰科技大学提供奖学金2.6w AUD每年。
昆士兰科技大学位于昆士兰州首府,第三大城市布里斯班市区,这里四季如春,风景优美,是旅游胜地。另外,这里消费水平相对较低,奖学金足够租房和生活。 学校的地理位置非常好,在市区的布里斯班河畔,紧挨一个植物园,学习生活很惬意。
有意者请联系: liangzhi.kou@qut.edu.au, 或者微信:kouliangzhi
同时也非常欢迎申请CSC来我们组。
寇良志导师为人谦虚和善,悉心指导,年轻且科研能力强,课题丰富,经费比较充足。作为他的学生,我们很幸运,真的收获良多。
寇良志导师主要利用量化软件(VASP,SIESTA)从事第一原理模拟,研究兴趣包括低维纳米材料的力电磁耦合,气体捕获和催化,能源材料,拓扑绝缘体等。
发表文章:
已在物理,化学材料领域国际顶尖杂志发表76篇文章(三篇邀请综述),引用2500次,其中包括Nano Lett, ACS Nano; Adv. Mater.; NPG Asia Mater. J. Phys. Chem. Lett; 等。
10篇代表作:
1. *X Tang, A Du, L. Kou, Gas sensing and capturing based on two‐dimensional layered materials: Overview from theoretical perspective, WIREs: Comp. Mol. Sci., DOI: 10.1002/wcms.1361, 2018
2. L Kou, Y Ma, Z Sun, T Heine, C Chen, Two-Dimensional Topological Insulators: Progress and Prospects, J. Phys. Chem. Lett. 8, 1905, 2017
3. L. Kou, Y. Ma, C. Tang, Z. Sun, A. Du and C. Chen, Auxetic and Ferroelastic Borophane: A Novel 2D Material with Negative Possion’s Ratio and Switchable Dirac Transport Channels, Nano Lett. 16, 7910, 2016
4. L Kou, T Frauenheim, C Chen, Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I–V Response, J. Phys. Chem. Lett. 6, 2794, 2015.
5. L Kou*, C Chen, S. Smith, Phosphene: Fabrication, Properties and Applications, J. Phys. Chem. Lett. 6, 2794, 2015.
6. L. Kou, S.-C. Wu, C. Felser, T. Frauenheim, C. Chen and B. Yan, Robust 2D Topological Insulator in van der Waals heterostructures, ACS Nano 8, 10448, 2014.
7. L. Kou, B. Yan, F. Hu, S.-C. Wu, T. Wheling, C. Felser, C. Chen and T. Frauenheim, Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature Nano Lett. 13, 6251, 2013.
8. L. Kou, C. Li, Z. Zhang and W. Guo, Tuning magnetism in Zigzag ZnO nanoribbons by transverse electric fields,ACS Nano, 4, 2124, 2010.
9. L. Kou, C. Tang, W. Guo and C. Chen, Tunable Magnetism in Strained Graphene with Topological Line Defect, ACS Nano, 5, 1012, 2011.
10. X. Han, L. Kou, et al. Electronic and Mechanical Coupling in Bent ZnO nanowires, Adv. Mater. 21, 4937, 2 |